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1.
SEM image of
a four terminal measurement structure fabricated by FIB in the Cambridge
Device Materials Group. The structure is designed to measure the out-of
plane resistance of a heterostructure - in this example the connecting
wires are each 200nm wide and so a 200nm x 200nm column of material
is measured. This structure eliminates series resistance problems
possible in an earlier two-terminal structure (see Bell et al. Nanotechnology
14, 630 (2003)
2.
Image
courtesy of Chris Bell, University of Cambridge
Nanoscale
superconducting quantum interference device directly
fabricated by focused ion beam from a Nb/CuNi/Nb trilayer.
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last Modified: November 19th 2003
